Prof. G. Bahir’s Home Page

 

Gad Bahir

Office: Solid State Institute, 3rd floor, Room no. 318

Phone: 972-4-8293598

E-mail: bahir@ee.technion.ac.il

.

Professor Gad Bahir Israeli-born, earned his B.Sc. degree in physics and mathematics from Hebrew University, Jerusalem, Israel, in 1969, and the M.Sc. and Ph.D. degrees in physics from the Technion–Israel Institute of Technology, Haifa, Israel, in 1976 and 1982, respectively. He has been a Visiting Scientist at the University of Aahrus, Denmark (1975), and during the years 1984-1987 he was a Post-Doctoral Fellow at the University of California, Santa Barbara and a visiting scientist at Stanford University, Stanford, CA.  In 1990 he joined the Department of Electrical Engineering, Technion–Israel Institute of Technology, where he is now a Full Professor. He was Director of the Microelectronics Research Center at the Technion from 2002 to 2005. In 1997 and 2007 he was a Visiting Professor at the University of California Santa Barbara, USA. He is currently engaged in research on advanced unipolar-based devices in quantum wells and quantum dots. Other areas of interest include properties of GaN-based heterostructures and superlattices and their applications in optoelectronics devices.

 

Areas of research interest 

Physics and technology of semiconductor based devices. Semiconductor IR detectors: narrow bandgap semiconductors, quantum well and quantum dots IR detectors. Optical and electronic properties of semiconductor heterostructures. III-nitrides based heterostructures and devices for power electronics and opto-electronic sensing. Unipolar III-nitrides based devices. Plasmonic coupling to intersubband based devices. Dilute nitrides for IR lasers and detectors.