Invited talks

Gad Bahir, Matias Katz,  Asaf Pesach, Ben Dror, N. Grandjean, Meir Orenstein,“Metamaterials and metallic hole arrays coupled to short wave infrared intersubband transitions in the GaN/AlN based quantum cascade structures” presented at CLEO Pacific Rim, Hong Kong, 2018

 

Gad Bahir, Matias Katz, Asaf Pesach, Ofir Sorias, Lior Gal, Piotr M. Mensz, Meir Orenstein, “Progress in research on III-nitrides based  intersubband Quantum Cascade Detectors”, International Workshop on Nitrides Semiconductors (IWN 2016), Orlando, Florida, USA, 2016.

 

G. Bahir, A. Pesach, A. Vardi, M. Katz, M. Orenstein, M. Tchernycheva, F. Julien, E. Monroy, N. Grandjean, “Polar and Non-Polar Inter-subband Transition Based Devices in AlGaN/(In)GaN Heterostructures”, International Workshop on Physics of Semiconductor Devices (IWPSD 2015), Bangalore, India 2015.

 

E. Monroy, M. Beeler, E. Bellet-Almaric, and C. Bougerol, P. Hille, J. Schrmann, and M. Eickhoff, S. Valdueza-Felip, L. Monteagudo-Lerma and F. Naranjo, M. Tchernycheva and F. Julien, A. Pesach, A. Vardi, and G. Bahir, ”Intersubband transitions in nitrides; physic and optoelectronics”, International Workshop on Nitrides Semiconductors (IWN), Wroclaw, Poland 2014.

 

E. Monroy, M. Beeler, E. Trichas, S. Valdueza-Felip, E. Ballet-Amalric, C. Bougerol, S. Sakr, M.Tchernycheva, F. H. Julien, E. Gross, A. Pesach, G. Bahir, “Quantum Cascade Structures”, International Conference on Nitrides Semiconductors (ICNS) 2013, Washington DC, USA, August 2013.

 

G. Bahir, “Intersubband Transition-Based Devices in AlGaN/GaN Heterostructures”, Photonics Global Conference (PGC) 2012, Singapore, December 2012.

 

E. Monroy, M. Beeler, Y. Kotsar, S. Valdueza-Felip, R. Songmuang, S. Sakr, M. Tchernycheva, F. H. Julien, E. Gross, A. Pesach, G. Bahir, M.-P. Chauvat, and P. Ruterana, “III-N heterostructures for infrared optoelectronics: present and perspectives” 21st European Workshop on Heterostructure Technology (HETECH 2012), Barcelona, Spain. Nov. 2012.

 

E. Monroy, Y. Kotsar, A. Das, S. Valdueza-Felip, E. Bellet-Amalric, C. Bougerol, R. Songmuang, L. Rapenne, E. Sarigiannidou, S. Sakr, M. Tchernycheva, F. H. Julien, E. Gross, A. Pesach, and G. Bahir, “GaN quantum devices for infrared optoelectronics”, 4th Int. Symposium on the Growth of III-Nitrides (ISGN4), St. Petersburg, Russia. July 2012.

 

E. Monroy, Y. Kotsar, A. Das, S. Valdueza-Felip, E. Bellet-Amalric, C. Bougerol, R. Songmuang, S. Sakr, M. Tchernycheva, F. H. Julien, E. Gross, A. Pesach, and G. Bahir, “Progress on III-nitride nanostructures for intersubband optoelectronics” International Conference on Superlattices, Nanostructures, and Nanodevices (ICSNN 2012), Dresden, Germany. July 2012

 

E. Monroy, Y. Kotsar, A. Das, S. Valdueza-Felip, P. K. Kandaswamy, R. Songmuang, S. Sakr, M. Tchernycheva, F. H. Julien, E. Gross, A. Pesach, and G. Bahir, “Fabrication and Characterization of Al(Ga)N/GaN ISB Devices” Int’l Workshop on SMART Energy Harvesting and Saving with III-Nitride Semiconductors “Frontier of Nitride Semiconductor Alloy Photonics (NSAP 2012), Chiba, Japan. May 2012

 

E. Monroy, Y. Kotsar, Q. Li, P. K . Kandaswamy, S. Sakr, M. Tchernycheva, and F. H. Julien, A. Vardi and G. Bahir, “Quantum Cascade Detectors based on III-Nitride heterostructures”, Photonics West (SPIE), San Francisco, U.S.A. January 2011.

 

E. Monroy, Y. Kotsar, P. K . Kandaswamy, H. Machhadani, S. Sakr, M. Tchernycheva, F. H. Julien, A. Vardi, and G. Bahir, “Quantum Cascade Detectors and Emitters” International Workshop on Nitride Semiconductors (IWN-2010), Tampa, USA, September 2010.

 

M. Tchernycheva, F. H. Julien, A. Vardi, G. Bahir and E. Monroy, “III-Nitrides intersubband devices” Photonics West (SPIE), San Fransisco, U.S.A. January 2010.

 

M. Tchernycheva, H. Macchadani, L. Nevou, J. Mangeney, F. H. Julien, P. K. Kandaswamy, A. Wirthmüller, E. Monroy, A. Vardi, S. Schacham, G. Bahir, G. Pozzovivo, S. Golka, G. Strasser, “Intersubband optics at 1.55 μm in GaN-based nanostructures – Physics and applications” E-MRS Fall Meeting 2009, Warsaw, Poland, September 2009.

 

Kandaswamy P. K., Lahourcade L., Wirthmüller A., Bougerol C., Monroy E., Machhadani H., Sakr S., Tchernycheva M., Julien F., Vardi A. and Bahir G. “GaN/AlN-based nanostructures for intersubband devices”, 51st Electronic Materials Conference (EMC 2009), University Park, Pensylvania, USA, June 2009

 

E. Monroy, P. K. Kandaswamy, L. Lahourcade, F. Guillot, H. Machhadani, L. Nevou, M. Tchernycheva, F. H. Julien, E. Boumann, F. R. Giorgetta, D. Hofstetter, A. Vardi, G, Bahir, T. Remmele and M. Albrechi, “New Frontiers in Plasma-Asisted MBE of GaN-Based Intersubband Devices”, International Workshop on Nitride Semiconductors (IWN08), Montreux, Switzerland, October 2008.

 

A.Vardi, Gad Bahir, F. Guillot, C. Bougerol, E. Monroy and S. C. Schacham, “Near IR Potodetectors Based on Intraband Transitions in Gan\AlN Heterostructures”, The Fifth International Conference on Mathematical Modeling and Computer Simulations of Materials Technology (MMT08), Ariel, Israel, September 2008.

 

G. Bahir, “Infrared photon detectors: from narrow-bandgap semiconductors to quantum dots”, Presented at The 3rd International Symposium on Quantum-Functional Systems (ISQFS 2003), Fremantle, Australia 2003.

 

G. Bahir, “Polarized Front-illumination Response in Quantum Dots Infrared Photodetectors” Presented at SPIE (The International Society for Optical Engineering) 47th Annual Meeting, Seattle, USA, 2002.

 

N. Akopian, L. Langof, E. Lifshitz, D. Gershoni, G. Bahir, C. Poblentz, C. R. Elsass, I. P. Smorchkova, and J. Speck, “Observation of the Fermi Edge Singularity in the Photoluminescence Spectra of AlGaN/GaN Single Heterostructures”. Presented at the International Workshop on the Physics of Light-Matter Coupling in Nitrides- 2, Crete, Greece, 2002.

 

E. Berkowicz, D. Gershoni, G. Bahir, A.C. Abare, S.P. DenBaars, and L.A. Coldren, “Optical Spectroscopy of InGaN/GaN Quabtum Wells”, presented at The 3rd International Conference on Nitride Semiconductors (ICNS3), Montpellier, France 1999.

 

E. Finkman, S. Maimon, V. Immer, G. Bahir, S. E. Schcham, O. Gauthier-Lafaye, S. Herriot, F. H. Julien, M. Gendry, and J. Brault, “Quantum Dot Infrared Detectors in New Material Systems”, presented at the 5th International Conference on Intersubband Transitions in Quantum Wells (ITQW99), Bad-Ischl, Austria 1999.

 

E. Berkowicz, D. Gershoni, G. Bahir, A.C. Abare, S.P. DenBaars, and L.A. Coldren, “Intrinsic Radiative Lifetime of Excitons in InGaN/GaN Quantum Wells”, presented at the 24th International Conference on the Physics of Semiconductors (ICPS), Jerusalem, Israel 1998.

 

E. Bahir, “Heterostructure Narrow Band-Gap HgCdTe Long Wavelength Infrared Photodiodes”. Presented at the 9th International Workshop on Physics of Semiconductor Devices (IWPSD`97), India 1997.

 

S. Maimon, E. Finkman, G. Bahir, S. Schacham, J. Garcia, P.M. Petroff, “Quantum Dots Infrared Photodetectors (QDIP)”. Presented at the International Conference on Intersubband Transitions in Quantum Wells: Physics and Applications (ITQW`97), Taiwan, 1997.

 

S. Maimon, G. Bahir, E. Finkman, S. E. Schacham and D. Ritter, “Modulation of Mobility for Above Barrier Optically Excited Carriers in InGaAs/InP QWIP”. Presented at the 3rd International Conference on Intersubband Transitions in Quantum Wells, Physics and Applications. Ginosar, Israel, 1995.